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PRELIMINARY
RT3J22M
Composite Transistor For high speed switching Silicon -channel MOSFET
DESCRIPTION
RT3J22M is a composite transistor built with two INJ0002AX chips in SC-88 package.
OUTLINE DRAWING
2.1 1.25 0.65 0.2
Unitmm
FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=0.61.2V Low on Resistance. Ron=3(TYP) High speed switching. Small package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65 0.13 00.1
Tr.1
0.9
0.65
Tr.2
TERMINAL CONNECTOR SOURCE1 GATE1 DRAIN2 SOURCE2 GATE2 :DRAIN1 JEITASC-88
MAXIMUM RATING (Ta=25)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING UNIT V V mA mW
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipationTa=25 Channel temperature Range of Storage temperature
-30 8 -200
150 125 -55125
. .
2 3
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3J22M
Composite Transistor For high speed switching Silicon -channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=-100A, VGS=0V V V V
GS=5V, VDS=0V DS
-30 GS
220 3 35 7.3 14 100
0.5 -50 -1.2 -
V A A V mS pF pF ns
=-30V ,VGS=0V
DS= V
I D=-250A, V
DS
-0.6 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=-10V, I D=-0.1A
I D=-100mA, V GS=-4.0V V DS=-10V, V GS=0V,f=1MHz V V V
DS
=-10V, V
GS
=0V,f=1MHz
DD=-5V , I D=-10mA GS=0-5V
Switching time test condition
test circuit
0 IN
OUT
0V
RL -5V 10s VDD=-5V D.U.1% Common source Ta=25 50 VDD
input waveform
-5V VDS(ON
10%
90%
output waveform
VDD
ton
90%
10%
tr toff tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25 -100 -1.9V Drain current ID (mA) -80 -1.8V Drain current ID (mA) -1.7V -1.6V -1.5V -1.4V -20 VGS=-1.3V -0.8 ID -VDS -1 -1.0V -0.95V -0.9V -0.85V Ta=25 ID -VDS(Low voltage region)
-60 -40
-0.6 VGS=-0.8V -0.4
-0.2
-0 -0 -2 -4 -6 -8 -10 Drain-Source voltage VDS (V)
-0 -0 -0.1 -0.2 -0.3 -0.4 -0.5 Drain-Source voltage VDS (V)
IDR -VDS -100 Drain reverse current IDR (mA) Ta=25 VGS=0V
ID -VGS
-1000
Ta=25 VDS=-10V
Drain current ID (mA)
0 0.5 1 1.5 2
-100
-10
-10
-1 Drain-Source voltage VDS (V)
-1 -0 -1 -2 -3 -4 Gate-Source voltage VGS (V) -5
|Yfs| - ID 1000 Ta=25 VDS=-10V Forward transfer admittance |Yfs| (mS) Drain-Source ON voltage VDS(ON) (mV) -1000 Ta=25 VGS=-4V
VDS(ON) -ID
100
-100
10
-10
1 -1 -10 -100 -1000 Drain current ID (mA)
-1 -1 -10 Drain currentID (mA) C - VDS 100 Ciss -100
t - ID 10000 toff 1000 tf Capacitance C (pF) Ta=25
Switching time t (ns)
100 ton 10 tr 1 -0.1
10 Coss
Ta=25 VGS=0V 1 -0.1 -1 -10 -100
-1 -10 Drain current ID (mA)
-100
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2007

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